A GaAs FET model for large-signal applications
Abstract
A model for predicting the large-signal behavior of power FETs is developed on the basis of measurement data and linear and nonlinear circuit theory to facilitate the design of amplifiers, mixers, and oscillators using these devices. A frequency-domain solution scheme adaptable to computer-aided-design techniques permits the S-parameter representation of input and output networks in the total circuit model. Sample calculation results are compared with experimental values in graphs.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1984
- DOI:
- 10.1109/TMTT.1984.1132665
- Bibcode:
- 1984ITMTT..32..276P
- Keywords:
-
- Computer Aided Design;
- Equivalent Circuits;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Nonlinear Systems;
- Computer Programs;
- Microwave Amplifiers;
- Microwave Oscillators;
- Mixing Circuits;
- Network Synthesis;
- Power Amplifiers;
- Electronics and Electrical Engineering