Characterization of GaAs FET's in terms of noise, gain, and scattering parameters through a noise parameter test set

A method for the simultaneous determination of noise, gain, and scattering parameters of FETs is presented. The analytical basis of the technique is discussed, and the test setup (essentially a noise-test set based on a vectorial reflectometer) and (desk-computer) data-processing procedures are explained and illustrated. Results for an NE24483 GaAs FET at 4-12 GHz and drain current 5-30 percent of I(DSS) are compared to those obtained by conventional methods in graphs and tables, and good agreement and reduced uncertainty are found.