2-20-GHz GaAs traveling-wave amplifier
Abstract
Single-stage and two-stage GaAs traveling-wave amplifiers operating with flat gain responses in the 2-20-GHz frequency range are described. The circuits are realized in monolithic form on a 0.1-mm GaAs substrate with 50-ohm input and output lines. Complete gate and drain dc bias circuitry is included on the chip. By cascading these amplifier chips, a 30-dB gain in the 2-20-GHz range is demonstrated, with 9 + or - 1 dB noise figure.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- January 1984
- DOI:
- Bibcode:
- 1984ITMTT..32...71A
- Keywords:
-
- Amplifier Design;
- Frequency Response;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Gain;
- Traveling Wave Amplifiers;
- Cascade Control;
- Chips (Electronics);
- Computerized Simulation;
- Equivalent Circuits;
- Harmonic Analysis;
- Performance Prediction;
- Signal Analysis;
- Electronics and Electrical Engineering