Bloch line memory - An approach to gigabit memory

The development of magnetic solid-state memory devices using vertical Bloch lines (VBLs) in bubble garnet films is discussed in a summary of computer simulations and experimental studies performed at Kyushu University during 1983-1984. Sample results are presented in graphs, diagrams, and photographs. Phenomena examined include the collapse of a stripe domain, stripe-domain chopping, VBL propagation, and VBL generation. The importance of potential wells at the VBL and domain wall for bit-by-bit propagation is demonstrated, and the need for a three-dimensional simulation is indicated. It is predicted that densities as high as 1.6 Gbit/sq cm can be obtained using 500-nm films.