Operation of magnetic bubble logic devices
Abstract
Dual-conductor current-access magnetic-bubble logic devices have been fabricated using 2-micron lithography on garnet with 2-micron-diameter bubbles. The devices include an AND/OR gate, a comparator gate, and a switch gate. The operating margins of these gates were measured at 100 kHz and at 1 MHz with a sampling optical microscope. A 30-Oe operating bias-field margin was obtained for all the logic gates. The experimental results are in good agreement with the computer simulation results. The simulated failure modes of operation are discussed.
- Publication:
-
IEEE Transactions on Magnetics
- Pub Date:
- September 1984
- DOI:
- 10.1109/TMAG.1984.1063564
- Bibcode:
- 1984ITM....20.1093W
- Keywords:
-
- Bubble Memory Devices;
- Bubble Technique;
- Computerized Simulation;
- Logic Circuits;
- Logical Elements;
- Magnetic Switching;
- Bias;
- Chips (Memory Devices);
- Fabrication;
- Failure Modes;
- Garnets;
- Gates (Circuits);
- Lithography;
- Off-On Control;
- Switching Circuits;
- Electronics and Electrical Engineering