A 2-18-GHz monolithic distributed amplifier using dual-gate GaAs FET's
Abstract
This paper describes a 2-18-GHz monolithic distributed amplifier with over 6-dB gain, plus or minus 0.5-dB gain flatness, and less than 2.0:1 VSWR. The measured noise figure is below 7.5 dB, and the power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance are also presented.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1984
- DOI:
- 10.1109/T-ED.1984.21820
- Bibcode:
- 1984ITED...31.1926K
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Equivalent Circuits;
- Fabrication;
- Frequency Response;
- Gates (Circuits);
- Power Gain;
- Transistor Amplifiers;
- Electronics and Electrical Engineering