III-V compound semiconductor devices - Optical detectors
Abstract
This article presents a review of the historical developments in optical detectors and discusses the motivations for interest in III-V semiconductors for optical-detector applications. Early device work in both depletion-mode photodiodes and avalanche photodiodes in III-V semiconductors is covered as well as the improvements that have been made in avalanche photodiode structures through work in silicon. Also, the results of ionization coefficient measurements on III-V compounds are summarized. Finally, several examples of recent avalanche photodiodes that utilize the unique properties of heterostructures are presented.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1984
- DOI:
- 10.1109/T-ED.1984.21765
- Bibcode:
- 1984ITED...31.1643S
- Keywords:
-
- Light Emitting Diodes;
- Photodiodes;
- Semiconductor Devices;
- Absorptivity;
- Avalanche Diodes;
- Evolution (Development);
- Heterojunction Devices;
- Histories;
- Ionization Coefficients;
- Quantum Efficiency;
- Electronics and Electrical Engineering