Operating principles of bipolar transistor magnetic sensors
Abstract
Dual-collector bipolar transistor structures have been evaluated and found to be sensitive to an applied magnetic field. In particular, the magnetic field results in unequal currents to the two collectors. The output signal is taken as a differential voltage developed across the output load resistors. The mechanism giving rise to the unequal collector currents appears to be emitter-injection modulation caused by the applied magnetic field. The magnetic field causes the injection from one portion of the emitter to be enhanced while suppressing injection elsewhere thus setting up unequal currents to the two collectors. A simplified theory is presented to explain the behavior of these devices. The theory is found to be in general agreement with experimental results obtained from a number of different device configurations.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1984
- DOI:
- 10.1109/T-ED.1984.21737
- Bibcode:
- 1984ITED...31.1486V
- Keywords:
-
- Bipolar Transistors;
- Electric Current;
- Hall Effect;
- Magnetic Probes;
- Sensors;
- Current Density;
- Magnetic Fields;
- Minority Carriers;
- N-P-N Junctions;
- P-N Junctions;
- P-N-P Junctions;
- Electronics and Electrical Engineering