Transition from the bipolar to the bulk-barrier transistor
Abstract
In a conventional bipolar transistor the current is limited by diffusion in the neutral base region. In the bulk-barrier transistor the current is determined by diffusion or thermionic emission over a potential barrier. This type of operation occurs in bipolar transistors if the width of the neutral base is below a definite value. The limit between bipolar- and bulk-barrier mode is defined. The current voltage-characteristic as well as the small signal equivalent circuit are given.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- October 1984
- DOI:
- Bibcode:
- 1984ITED...31.1447M
- Keywords:
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- Bipolar Transistors;
- Equivalent Circuits;
- N-P-N Junctions;
- P-N-P Junctions;
- Thermionic Emission;
- Volt-Ampere Characteristics;
- Electric Current;
- Electric Potential;
- Frequency Response;
- Maxwell-Boltzmann Density Function;
- Minority Carriers;
- Electronics and Electrical Engineering