Instabilities in MODFET's and MODFET circuits
Abstract
Instability phenomena of modulation-doped field effect transistors (MODFETs) are reported. These instabilities can be caused by traps or by high-frequency oscillations. The traps may cause a negative conductance regime which in turn induces high-frequency oscillations. The noise level in the high drain voltage region can be reduced by improving technology to reduce the trap density and by careful circuit layout.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1984
- DOI:
- 10.1109/T-ED.1984.21712
- Bibcode:
- 1984ITED...31.1345D
- Keywords:
-
- Doped Crystals;
- Electromagnetic Noise Measurement;
- Field Effect Transistors;
- Noise Intensity;
- Thermal Instability;
- Volt-Ampere Characteristics;
- Carrier Density (Solid State);
- Negative Conductance;
- Noise Spectra;
- Thermal Noise;
- Electronics and Electrical Engineering