Design and performance of a new static induction thyristor The gated V-groove p-i-n diode
Abstract
A new form of static induction thyristor is described. An account is given of models which predict the on-state and forward blocking characteristics. Experimental results are compared with theory and conclusions drawn as to the performance of the structure relative to other SIT devices, the GTO thyristor, and the power MOS transistor.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1984
- DOI:
- 10.1109/T-ED.1984.21703
- Bibcode:
- 1984ITED...31.1299F
- Keywords:
-
- Gates (Circuits);
- P-I-N Junctions;
- Semiconductor Diodes;
- Switches;
- Thyristors;
- V Grooves;
- Computerized Simulation;
- Electrical Engineering;
- Performance Tests;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering