Comparison of theoretical and experimental results for millimeter-wave GaAs IMPATT's
Abstract
Simulations are performed of GaAs IMPATT diodes for which experimental results are available at 20, 33, and 44 GHz. At each frequency, simulations are performed using both the drift-diffusion approximation and the energy-momentum transport model. It is found that inclusion of energy and momentum relaxation effects yields better agreement with experiment.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1984
- DOI:
- 10.1109/T-ED.1984.21699
- Bibcode:
- 1984ITED...31.1273M
- Keywords:
-
- Avalanche Diodes;
- Carrier Transport (Solid State);
- Gallium Arsenides;
- Microwave Equipment;
- Millimeter Waves;
- Electrical Properties;
- Finite Difference Theory;
- Kinetic Energy;
- Power Efficiency;
- Systems Simulation;
- Electronics and Electrical Engineering