A time and temperaturedependent 2D simulation of the GTO thyristor turnoff process
Abstract
A twodimensional model simulation of a GTO has been performed in order to analyze the onregion squeezing process. As the turnoff process proceeds, most parts of the excess carriers in the pbase and the adjacent G x K and middle junctions are removed. However, nbase carriers remain almost unchanged, resulting in a uniform current distribution at the anode side in spite of the onregion squeezing in the pbase. Relatively high anode voltage is necessary to sustain high current density in the reduced onregion. A substantial anode voltage recovery is suggested for a higher mode current turnoff case when the onregion width reaches its observed final value of 60 microns. Onehalf of its width coincides with the ambipolar diffusion length in the emitterbase junction; this length is the lowest value of the pbase because of carriertocarrier scattering due to the high injected carrier density.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 September 1984
 DOI:
 10.1109/TED.1984.21681
 Bibcode:
 1984ITED...31.1156N
 Keywords:

 Gates (Circuits);
 Semiconductor Plasmas;
 Switching Circuits;
 Temperature Dependence;
 Thyristors;
 Time Dependence;
 Two Dimensional Models;
 Current Density;
 Density Distribution;
 Electron Density (Concentration);
 Mathematical Models;
 Temperature Distribution;
 Electronics and Electrical Engineering