A time- and temperature-dependent 2-D simulation of the GTO thyristor turn-off process
Abstract
A two-dimensional model simulation of a GTO has been performed in order to analyze the on-region squeezing process. As the turn-off process proceeds, most parts of the excess carriers in the p-base and the adjacent G x K and middle junctions are removed. However, n-base carriers remain almost unchanged, resulting in a uniform current distribution at the anode side in spite of the on-region squeezing in the p-base. Relatively high anode voltage is necessary to sustain high current density in the reduced on-region. A substantial anode voltage recovery is suggested for a higher mode current turn-off case when the on-region width reaches its observed final value of 60 microns. One-half of its width coincides with the ambipolar diffusion length in the emitter-base junction; this length is the lowest value of the p-base because of carrier-to-carrier scattering due to the high injected carrier density.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1984
- DOI:
- 10.1109/T-ED.1984.21681
- Bibcode:
- 1984ITED...31.1156N
- Keywords:
-
- Gates (Circuits);
- Semiconductor Plasmas;
- Switching Circuits;
- Temperature Dependence;
- Thyristors;
- Time Dependence;
- Two Dimensional Models;
- Current Density;
- Density Distribution;
- Electron Density (Concentration);
- Mathematical Models;
- Temperature Distribution;
- Electronics and Electrical Engineering