New infrared detector on a silicon chip
Abstract
The feasibility of fabricating infrared photodetectors for long-wavelength fiber-optic communications on a silicon chip is demonstrated. Single crystal germanium p-i-n diodes with a quantum efficiency of roughly 40 at 300 K were grown on conducting silicon substrate using molecular beam epitaxy. The current-voltage characteristics and the photoresponse spectra of the junction at different temperatures are presented and discussed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1984
- DOI:
- Bibcode:
- 1984ITED...31.1135L
- Keywords:
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- Germanium Diodes;
- Infrared Detectors;
- P-I-N Junctions;
- Silicon Junctions;
- Single Crystals;
- Volt-Ampere Characteristics;
- Electron Microscopy;
- Leakage;
- Molecular Beam Epitaxy;
- Quantum Efficiency;
- Substrates;
- Electronics and Electrical Engineering