A new ac measurement technique to accurately determine MOSFET constants

A simple and accurate technique to obtain the MOSFET constants, the mobility degradation coefficient, and the parasitic series resistance is presented. Results are given for a PMOS transistor array with constant width and variable channel lengths. The proposed method does not require significant data reduction, and it yields a refined value for the threshold voltage V(T) by curve-fitting the measured and computed gate characteristics with V(T) as a parameter. This procedure reduces the sensitivity of the technique to small errors made in a V(T) measurement.