A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor

This paper reports a new open diffusion technique with a thin vacuum-deposited Zn3P2 layer covered by an Al2O3 layer. The diffusion in (100) n-InP single crystals by this technique was studied and degradation-free surfaces were obtained. The diffusion profiles were measured. With high-temperature diffusion, p(+)-p(-)-n junctions were obtained, whereas at lower temperature, abrupt p(+)-n junctions were found. For the first time a planar diffused InGaAsP/InP lateral p-n-p transistor was produced (current gain about unity so far) based on this new technique.