Enhanced quantum efficiency of Pd2Si Schottky infrared diodes on 111-line Si
Abstract
A two-fold improvement in the infrared emission efficiency has been obtained on Pd2Si/p-Si Schottky diodes through a proper choice of the Si substrate orientation. Photoresponse measurements on thin Pd2Si/p-Si infrared Schottky detectors (lambda-c = 3.5 microns) yielded Fowler C1 coefficients of 66 percent/eV for 111-line Si and 32 percent/eV for 100-line Si. Leakage current versus temperature measurements at 6-V reverse bias of these Pd2Si/p-Si 111-line diodes with guard ring structures agreed with thermionic-emission leakage-current theory using the photoresponse obtained barrier value of 0.35 eV. These results have impact on SWIR detection applications such as earth resources satellite mapping.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1984
- DOI:
- 10.1109/T-ED.1984.21639
- Bibcode:
- 1984ITED...31..968M
- Keywords:
-
- Infrared Detectors;
- Palladium Compounds;
- Quantum Efficiency;
- Silicides;
- Current Density;
- Fabrication;
- Photosensitivity;
- Temperature Measurement;
- Electronics and Electrical Engineering