Principles of operation of short-channel gallium arsenide field-effect transistor determined by Monte Carlo method
Abstract
The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. I(ds) = 3.3 mA/20 microns, g(m) = 600 mS/mm, and f(T) = 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1984
- DOI:
- 10.1109/T-ED.1984.21549
- Bibcode:
- 1984ITED...31..448A
- Keywords:
-
- Electrical Properties;
- Field Effect Transistors;
- Gallium Arsenides;
- Monte Carlo Method;
- Volt-Ampere Characteristics;
- Band Structure Of Solids;
- Electron Mobility;
- Electronics and Electrical Engineering