A novel wide dynamic range silicon photodetector and linear imaging array
Abstract
A novel silicon solid-state photodetector structure utilizing the MOSFET subthreshold effect was conceived, developed, fabricated, and experimental results were obtained. This photodetector device, which can be integrated on the same chip with MOSFET circuits or CCDs, provides an analog voltage signal over a wide dynamic range. Fabricated photodetector devices and arrays showed experimentally, in the visible spectrum, an incoming radiation detection light intensity dynamic range of greater than 10 to the 7th. In addition, the novel photodetector device was used to realize CCD and self-scanned MOSFET linear arrays. In this paper, the theory of the new photodetector device and its applications to form linear imaging arrays are described in detail. Finally, experimental results obtained on developed and fabricated devices and arrays are presented.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- February 1984
- DOI:
- Bibcode:
- 1984IJSSC..19...41C
- Keywords:
-
- Charge Coupled Devices;
- Field Effect Transistors;
- Image Transducers;
- Linear Arrays;
- Metal Oxide Semiconductors;
- Silicon Radiation Detectors;
- Chips (Electronics);
- Equivalent Circuits;
- Fabrication;
- Integrated Circuits;
- Photosensitivity;
- Range (Extremes);
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering