The far field of PbSnTe injection lasers
Abstract
The far-field pattern perpendicular to the junction plane of a PbSnTe injection laser with controlled carrier concentration was measured. The far-field pattern, calculated according to the Lewin formalism and represented by the obliquity factor (Oron and Zussman, 1980), is shown to differ only by about 2 percent from the alternative expressions of Lewin (1975) and Butler and Zoroofchi (1974). The experimental far-field pattern are shown to agree with the theoretical calculations with a deviation of less than 10 percent. The TE and TM far-field patterns are discussed, and design considerations are given for constructing laser structures having an improved far-field pattern.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- November 1984
- DOI:
- 10.1109/JQE.1984.1072306
- Bibcode:
- 1984IJQE...20.1267S
- Keywords:
-
- Far Fields;
- Heterojunction Devices;
- Injection Lasers;
- Lead Tellurides;
- Semiconductor Lasers;
- Tin Tellurides;
- Carrier Density (Solid State);
- Infrared Lasers;
- Laser Modes;
- Lasing;
- Lasers and Masers