GaInAsP/InP surface emitting injection laser with a ring electrode
Abstract
A GaInAsP/InP surface emitting injection laser (lambda = 1.2 microns) with a ring electrode has been fabricated. In this structure the reflecting mirror has been separated from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85 C. The cavity length was 7.5 microns and single longitudinal mode operation was achieved.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- October 1984
- DOI:
- Bibcode:
- 1984IJQE...20.1117U
- Keywords:
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- Electrodes;
- Indium Phosphides;
- Injection Lasers;
- Laser Materials;
- Semiconductor Lasers;
- Fabrication;
- Gallium Arsenides;
- Laser Cavities;
- Liquid Phase Epitaxy;
- Operating Temperature;
- Ring Structures;
- Threshold Currents;
- Lasers and Masers