Threshold currents for AlGaAs quantum well lasers
Abstract
The threshold currents for AlGaAs quantum well lasers are studied theoretically. The structure dependent gain coefficient is obtained by taking into account the electron distribution in L valleys. Theoretical threshold current densities calculated using the gain coefficient agree well with reported experimental results for separate-confinement heterostructure lasers. A design procedure for low threshold current laser is elucidated. The lowest threshold currents are 570 and 53 microamperes per 1 micron stripe width for modified multiple quantum well lasers with 32 percent and 90 percent reflectivity facet mirrors, respectively.
- Publication:
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IEEE Journal of Quantum Electronics
- Pub Date:
- April 1984
- DOI:
- Bibcode:
- 1984IJQE...20..336S
- Keywords:
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- Aluminum Gallium Arsenides;
- Heterojunction Devices;
- Semiconductor Lasers;
- Threshold Currents;
- Current Density;
- Laser Cavities;
- Power Gain;
- Lasers and Masers