Static characteristics of 1.5-1.6 micron GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers

Attention is given to the 1.5-1.6 micron dynamic single mode operation of GaInAsP/InP buried heterostructure, butt-jointed, built-in distributed Bragg reflector (DBR) integrated lasers. A coupling coefficient of more than 95 percent is estimated between the active region and the butt-jointed external waveguide region. When the lasers were operated in CW conditions at room temperature, with a threshold current of about 100 mA, single longitudinal mode operation was observed with a temperature dependence of about 0.13 nm/deg, over a temperature range of 50-65 C. The output spectrum below threshold indicated the strong wavelength selectivity of the DBR region, and the net gain difference between the main DBR mode and the adjacent submode was measured to be about 6/cm.