Monolithic integration of a metal-semiconductor-metal photodiode and a GaAs preamplifier
Abstract
A metal-semiconductor-metal (MSM) photodiode and a preamplifier have been monolithically integrated on a GaAs substrate by a very simple fabrication process. Measurements have shown that the constituent MSM photodiode has a sensitivity of 2.2 A/W and a - 3-dB cutoff frequency of as high as 1 GHz. The present photodiode has been found to realize an extremely high photosensitivity of the monolithically integrated circuit, 26 mV/microwatt.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1984
- DOI:
- 10.1109/EDL.1984.26014
- Bibcode:
- 1984IEDL....5..531I
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Photodiodes;
- Preamplifiers;
- Schottky Diodes;
- Metal Surfaces;
- P-I-N Junctions;
- Transistor Amplifiers;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering