Analysis of high electron mobility transistors based on a two-dimensional numerical model
Abstract
A two-dimensional numerical model is employed to simulate the device performance of the high electron mobility transistor. A 1-micron gate device is analyzed using the equilibrium velocity-field characteristic of GaAs. The calculation reveals existence of electron accumulation in the GaAs layer under the drain side end of the gate electrode. A quasi-piecewise linear velocity-field characteristic is also employed to simulate the velocity overshoot effect. The cutoff frequency is found to be improved by about 50 percent owing to the velocity overshoot effect.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1984
- DOI:
- 10.1109/EDL.1984.26007
- Bibcode:
- 1984IEDL....5..508Y
- Keywords:
-
- Computerized Simulation;
- Electron Mobility;
- Field Effect Transistors;
- Gallium Arsenides;
- High Electron Mobility Transistors;
- Two Dimensional Models;
- Volt-Ampere Characteristics;
- Carrier Transport (Solid State);
- Conduction Bands;
- Electron Distribution;
- Performance Prediction;
- Electronics and Electrical Engineering