Basic parameter measurement and channel broadening effect in the submicrometer MOSFET
Abstract
An improved measurement technique of the basic MOSFET parameters is presented. This method is based on the measured data of two identical devices with different channel lengths. The effect of series resistance and channel length can be separated from the mobility measurement. This is the only method in which it has been proved that mobility can be measured on a short channel device. A new technique of channel length and series resistance is done by the measurement of newly defined quantity, the equivalent channel length, that includes the effect of series resistance. Because of the success of this measurement method, a new phenomena, referred to as channel broadening effect, was investigated. Its effects on the submicrometer device characteristics were investigated.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1984
- DOI:
- 10.1109/EDL.1984.25993
- Bibcode:
- 1984IEDL....5..473P
- Keywords:
-
- Carrier Mobility;
- Electrical Measurement;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Capacitance;
- Carrier Transport (Solid State);
- Parameterization;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering