p-channel (Al,Ga)As/GaAs modulation-doped logic gates
Abstract
The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 x 10 to the 12th/sq cm and a 77K mobility of 1800 sq cm/V.s exhibit logic states of -0.25 and -0.98 V at 77K for a -1 V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- October 1984
- DOI:
- 10.1109/EDL.1984.25970
- Bibcode:
- 1984IEDL....5..420K
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Ttl Integrated Circuits;
- Volt-Ampere Characteristics;
- Beryllium;
- Doped Crystals;
- Gates (Circuits);
- Molecular Beam Epitaxy;
- P-Type Semiconductors;
- Time Lag;
- Electronics and Electrical Engineering