The vertical hall-effect device
Abstract
A novel device, sensitive to the magnetic field parallel to the chip surface is described. The device has a form reminiscent of a semicircular plate placed perpendicularly to the chip plane. The operation principle is that of the conventional Hall-effect device. The unusual geometry principally does not affect sensitivity. The experimental samples are fabricated using a standard bulk CMOS technology, where the p-well deep diffusion is used to surround the active device volume. Sensitivity up to 450 V/AT is measured.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1984
- DOI:
- Bibcode:
- 1984IEDL....5..357P
- Keywords:
-
- Chips (Electronics);
- Cmos;
- Hall Effect;
- Integrated Circuits;
- Magnetic Effects;
- Carrier Transport (Solid State);
- Fabrication;
- Silicon Junctions;
- Thin Plates;
- Electronics and Electrical Engineering