A self-aligned In(0.53)Ga(0.47)As junction field-effect transistor grown by molecular beam epitaxy
Abstract
An In(0.53)Ga(0.47)As field-effect transistor has been fabricated on MBE-grown material, using a novel self-alignment technique. This device has a dc transconductance of 60 mS/mm for a 3-micron gate length, one of the highest reported figures for such a length, as well as a very low gate leakage of 100 nA at -3 V gate bias. These values make the device attractive for low-noise applications, particularly for monolithic integration with a p-i-n photodiode to form a high-sensitivity optical receiver.
- Publication:
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IEEE Electron Device Letters
- Pub Date:
- July 1984
- DOI:
- Bibcode:
- 1984IEDL....5..285W
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Indium Arsenides;
- Molecular Beam Epitaxy;
- Semiconductor Junctions;
- Volt-Ampere Characteristics;
- Fabrication;
- Indium Phosphides;
- Low Noise;
- P-I-N Junctions;
- Photodiodes;
- Spectral Sensitivity;
- Electronics and Electrical Engineering