The SIT saturation protected bipolar transistor
Abstract
A novel transistor fabrication concept for saturating logic gate arrays is proposed. The idea involves using a static induction transistor (SIT) to protect against saturation. Current simulation tests show encouraging switching times for the saturation-protected transistor gates when compared to similar gates without protection by a SIT. The collector charge-storage effect was practically eliminated.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1984
- DOI:
- Bibcode:
- 1984IEDL....5..263W
- Keywords:
-
- Bipolar Transistors;
- Circuit Protection;
- Electrical Faults;
- Integrated Circuits;
- Induction;
- Logic Circuits;
- N-P-N Junctions;
- P-N-P Junctions;
- Schottky Diodes;
- Very Large Scale Integration;
- Work Functions;
- Electronics and Electrical Engineering