Electrical characteristics of three-dimensional SOI/CMOS IC's
Abstract
Seven-stage ring oscillators fabricated in the three-dimensional (3-D) structure by using laser recrystallization with a cross scan method have a propagation delay of 430 ps per stage at 5 V. Uniform operating characteristics and high-speed performance are observed for chips covering a significant portion of 4-in diam SOI films, indicating a great possibility of 3-D IC's for future VLSI's. It has been found that the electrical characteristics of devices fabricated in the underlying bulk silicon are not degraded by the recrystallization of the silicon layer directly above.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1984
- DOI:
- 10.1109/EDL.1984.25906
- Bibcode:
- 1984IEDL....5..248K
- Keywords:
-
- Cmos;
- Field Effect Transistors;
- Recrystallization;
- Sis (Semiconductors);
- Very Large Scale Integration;
- Vhsic (Circuits);
- Volt-Ampere Characteristics;
- Chips (Electronics);
- Laser Annealing;
- Microchannels;
- Silicon Films;
- Time Lag;
- Voltage Controlled Oscillators;
- Electronics and Electrical Engineering