On the determination of source and drain series resistances of MESFET's
Abstract
Based on an implicit analytic solution of current transport equations applicable to a forward-biased Schottky barrier or junction-gate FET's with open drain, universal curves for three alpha-factors have been generated. These factors determine the channel resistance contributions to the device terminal dc and ac resistance. By measuring these resistances the values of the channel, source, and drain resistances have been determined.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1984
- DOI:
- 10.1109/EDL.1984.25904
- Bibcode:
- 1984IEDL....5..244C
- Keywords:
-
- Electrical Resistance;
- Field Effect Transistors;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Bias;
- Carrier Transport (Solid State);
- Gates (Circuits);
- Jfet;
- Network Analysis;
- Electronics and Electrical Engineering