Effects of ionizing radiation on SOI/CMOS devices fabricated in zone-melting-recrystallized Si films on SiO2

The effects of ionizing radiation of SOI/CMOS devices fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates have been investigated as a function of the negative bias applied to the substrate during irradiation and measurement. For these devices, which have a thin gate oxide 10 nm thick, the optimum substrate bias is -5 V. For total doses up to 10 to the 7th rad(Si), with this bias they exhibit low subthreshold leakage currents (less than 0.2-pA per micron), small threshold voltage shifts (less than 0.18 V for n-channel devices and less than 0.46 V for p-channel devices) and very little transconductance degradation (less than 5 percent).