Formation of a TiSi2/n(+) poly-Si layer by rapid lamp heating and its application to MOS devices
Abstract
Ti-Si thin films, co-sputter deposited from a titanium and a poly-Si target, have been rapidly lamp heated within 10 s to produce uniform highly conductive layers comparable to furnace-heated films. MOS devices are fabricated using this Ti-Si rapid lamp heating. It is shown that rapid lamp heating results in much lesser failure involving gate oxide breakdown voltage compared to furnace heating. MOSFET's also exhibit excellent device characteristics.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- July 1984
- DOI:
- 10.1109/EDL.1984.25895
- Bibcode:
- 1984IEDL....5..217Y
- Keywords:
-
- Gates (Circuits);
- Metal Oxide Semiconductors;
- Pulse Heating;
- Quartz Lamps;
- Silicon Films;
- Titanium Compounds;
- Electrical Faults;
- Electrical Resistance;
- N-Type Semiconductors;
- Polycrystals;
- Silicides;
- Surface Roughness;
- Electronics and Electrical Engineering