Evaluation of LDD MOSFET's based on hot-electron-induced degradation
Abstract
Hot-electron-induced device degradation in LDD MOSFET's is thoroughly studied. Conventional ways to characterize device degradation, i.e., threshold shift and transconductance reduction, are not suitable for LDD MOSFET's due to the nature of degradation in such devices. Using a current-drive degradation criterion, it is shown that LDD MOSFET's have little net advantage over conventional MOSFET's in terms of hot-electron-induced long-term degradation.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1984
- DOI:
- 10.1109/EDL.1984.25870
- Bibcode:
- 1984IEDL....5..162H
- Keywords:
-
- Doped Crystals;
- Field Effect Transistors;
- Hot Electrons;
- Metal Oxide Semiconductors;
- Thermal Degradation;
- Carrier Injection;
- Long Term Effects;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering