GaAs IMPATT diodes for 60 GHz
Abstract
High-performance GaAs double-drift Read IMPATT diodes have been demonstrated at 60 GHz. 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency was obtained with a junction temperature rise of 225 C. The doping profiles and test circuits have not yet been optimized and we expect that still higher power and efficiency should be achievable.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- March 1984
- DOI:
- Bibcode:
- 1984IEDL....5...97A
- Keywords:
-
- Avalanche Diodes;
- Electrical Impedance;
- Energy Conversion Efficiency;
- Gallium Arsenides;
- Microwave Circuits;
- Additives;
- Heat Sinks;
- Mass Spectrometers;
- Molecular Beam Epitaxy;
- Electronics and Electrical Engineering