Microwave performance of GaAs MESFET's with AlGaAs buffer layers - Effect of heterointerfaces
Abstract
Field-effect transistors consisting of GaAs active layers and Al(0,33)Ga(0.67)As buffer layers with abrupt, graded-bulk, and graded superlattice heterointerfaces were fabricated and compared to GaAs buffer transistors. Microwave measurements showed that a good interface is obtained in the graded superlattice interface structure and that there is a small improvement in gain (1-2 dB) over the GaAs buffer structure.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- March 1984
- DOI:
- Bibcode:
- 1984IEDL....5...82A
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Superlattices;
- Additives;
- Amplification;
- Molecular Beam Epitaxy;
- Solid-Solid Interfaces;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering