Double-implanted GaAs complementary JFET's
Abstract
The fabrication and performance characteristics of double-implanted GaAs complementary junction field-effect transistors (JFETs) suitable for low-power digital integrated circuit applications are described. Effective mobilities for the n-channel enhancement-mode JFET are 3500 sq cm/V-s and for the p-channel 300 sq cm/V-s. Experimental results of an ultra-low-power static RAM are presented.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 1984
- DOI:
- Bibcode:
- 1984IEDL....5...21Z
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Random Access Memory;
- Circuit Diagrams;
- Fabrication;
- Integrated Circuits;
- Logic Circuits;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering