Fast optoelectronic crosspoint electrical switching of GaAs photoconductors
Abstract
The optoelectronic crosspoint electrical switching characteristics of GaAs photoconductors were investigated by using a variable time-delay method. Rise and fall time as short as 0.6 and 1.1 ns, respectively, were observed at the very low operating bias of 3-4 V.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- January 1984
- DOI:
- 10.1109/EDL.1984.25808
- Bibcode:
- 1984IEDL....5....1L
- Keywords:
-
- Electric Switches;
- Electro-Optics;
- Frequency Response;
- Gallium Arsenides;
- Photoconductors;
- Broadband;
- Electric Potential;
- Photodiodes;
- Pulsars;
- Response Bias;
- Time Lag;
- Electronics and Electrical Engineering