Observation of negative differential resistance in In(0.53)Ga(0.47)As/InP:Fe JFETs
Abstract
A negative differential resistance (NDR) is observed in the drain-current/drain-source-voltage characteristic of In(0.53)-Ga(0.47)As/InP:Fe JFETs with gate lengths of 2 microns and 3 microns at small forward-biased gate-source voltages. This phenomenon is explained by the existence of a stationary Gunn domain in the channel at the drain side edge of the gate.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1984
- DOI:
- 10.1049/el:19840632
- Bibcode:
- 1984ElL....20..930A
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Jfet;
- Negative Resistance Devices;
- Volt-Ampere Characteristics;
- Gunn Effect;
- Heterojunction Devices;
- Indium Arsenides;
- Indium Phosphides;
- Liquid Phase Epitaxy;
- Electronics and Electrical Engineering