Low-threshold high-speed 1.55 micron vapour phase transported buried heterostructure lasers (VPTHBH)
Abstract
A new 1.55 micron InGaAsP buried heterostructure laser has been fabricated using a hydride vapor phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the low-doped VPE transported material, with 3 dB detected bandwidths out to 4.5 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1984
- DOI:
- 10.1049/el:19840581
- Bibcode:
- 1984ElL....20..856K
- Keywords:
-
- Gallium Arsenide Lasers;
- Heterojunction Devices;
- Infrared Lasers;
- Lasing;
- Semiconductor Lasers;
- Vapor Phase Epitaxy;
- Gallium Phosphides;
- Lasers and Masers