GaAs/LB film MISS switching device
Abstract
MISS switches incorporating Langmuir-Blodgett films as insulating layers are reported for the first time. Devices fabricated using n on p(+) GaAs and including a 9 nm-thick omega-tricosenoic acid insulating layer are shown to possess good characteristics. The results indicate that switching occurs due to a 'punch-through' mechanism.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1984
- DOI:
- 10.1049/el:19840569
- Bibcode:
- 1984ElL....20..838T
- Keywords:
-
- Gallium Arsenides;
- Junction Diodes;
- Mis (Semiconductors);
- Monomolecular Films;
- Switching Circuits;
- Electron Tunneling;
- Film Thickness;
- Oxide Films;
- P-N Junctions;
- Thin Films;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering