Transverse junction stripe lasers using Si-doped GaAs/AlGaAs grown by MBE
Abstract
The first successful results on room-temperature CW operation of transverse junction stripe (TJS) lasers using n-GaAs/AlGaAs molecular-beam epitaxy (MBE) films highly doped with silicon are reported. At room temperature, the lasers oscillated CW with low threshold current and high differential quantum efficiency, and they also operated CW above 80 C. Both single-transverse and single-longitudinal mode operation were observed up to 5 mW. Both uniform performance and high yield were obtained for the TJS lasers, due to the MBE technique. This implies that silicon acts as an excellent n-type dopant in the MBE-grown GaAs/AlGaAs films and is sufficiently tolerant to the high-temperature process and laser operation.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1984
- DOI:
- 10.1049/el:19840476
- Bibcode:
- 1984ElL....20..694M
- Keywords:
-
- Doped Crystals;
- Gallium Arsenides;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- Semiconductor Lasers;
- Aluminum Gallium Arsenides;
- Continuous Wave Lasers;
- Fabrication;
- Laser Modes;
- Laser Outputs;
- Quantum Efficiency;
- Room Temperature;
- Silicon;
- Lasers and Masers