Gigabit per second operation by monolithically integrated InGaAsP/InP LD-FET
Abstract
A single-step grown 1.3 micron buried-heterostructure laser and FET are monolithically integrated on a semi-insulating InP substrate. 2 Gbit/s RZ random pulse modulation has been first achieved for monolithic light sources.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1984
- DOI:
- 10.1049/el:19840425
- Bibcode:
- 1984ElL....20..618K
- Keywords:
-
- Indium Phosphides;
- Integrated Optics;
- Laser Materials;
- Semiconductor Lasers;
- Ultrashort Pulsed Lasers;
- Channel Capacity;
- Emission Spectra;
- Fabrication;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Light Sources;
- Picosecond Pulses;
- Pulse Modulation;
- Pulse Rate;
- Semiconductor Diodes;
- Electronics and Electrical Engineering