Optimisation of modulation-doped heterostructures for TEGFET operation at room-temperature
Abstract
Optimization of selectively doped (AlGa)As/GaAs heterostructures for TEGFET applications at room temperature is reported. The introduction of a thick (greater than 0.1 micron) highly doped GaAs top layer considerably reduces parasitic resistances and improves device performance. Best results for 1.4 micron gate length at room temperature are: transconductance 220 mS/mm; source resistance 0.2-0.4 mm; contact resistance less than 0.1 ohm mm and cutoff frequency 25 GHz. Results from comparable structures without a thick top layer are inferior by about 25 percent.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1984
- DOI:
- Bibcode:
- 1984ElL....20..615D
- Keywords:
-
- Doped Crystals;
- Electron Gas;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Aluminum Gallium Arsenides;
- Contact Resistance;
- Modulation;
- Operating Temperature;
- Room Temperature;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering