GaAs-loaded metal waveguide components for high-speed low-VSWR optoelectronic millimetre-wave switching
Abstract
A new approach to fast optoelectronic microwave and millimeter-wave switching is reported. The concept is based on a metal waveguide section containing a thin slab of semi-insulating GaAs. Modulation or switching is achieved by wave attenuation across a laser-induced photoconductive plasma wedge generated within the GaAs slab via edge excitation. First experimental results in the 30-35 GHz range are presented.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1984
- DOI:
- 10.1049/el:19840420
- Bibcode:
- 1984ElL....20..608P
- Keywords:
-
- Gallium Arsenides;
- Microstrip Transmission Lines;
- Microwave Switching;
- Optical Waveguides;
- Semiconductor Plasmas;
- Standing Wave Ratios;
- Electric Potential;
- Electro-Optics;
- Laser Applications;
- Millimeter Waves;
- Electronics and Electrical Engineering