Monolithically integrated Gunn oscillator at 35 GHz
Abstract
A fully planar monolithically integrated Gunn oscillator for 35 GHz has been constructed on a GaAs substrate. An output power of about 1.5 mW, corresponding to an efficiency of 0.5 percent, is obtained from the oscillator in its present unoptimized form. The device is intended for use as a local oscillator in integrated millimeter-wave receivers. Measurements are made by means of quasi-optical output coupling.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1984
- DOI:
- 10.1049/el:19840416
- Bibcode:
- 1984ElL....20..603W
- Keywords:
-
- Gunn Diodes;
- Integrated Circuits;
- Microwave Oscillators;
- Power Efficiency;
- Semiconductor Diodes;
- Gallium Arsenides;
- Resonators;
- Waveguide Antennas;
- Electronics and Electrical Engineering