N/+/-GaAs/undoped GaAlAs/undoped GaAs field-effect transistor
Abstract
The first self aligned accumulation-mode GaAs MIS-like FET having an n/+/-GaAs/undoped GaAlAs/undoped GaAs structure is reported The FETs fabricated show the threshold voltage of almost zero and very uniform characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs.
- Publication:
-
Electronics Letters
- Pub Date:
- May 1984
- DOI:
- 10.1049/el:19840323
- Bibcode:
- 1984ElL....20..462M
- Keywords:
-
- Aluminum Gallium Arsenides;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Sis (Semiconductors);
- Volt-Ampere Characteristics;
- Carrier Density (Solid State);
- Fabrication;
- Mis (Semiconductors);
- N-Type Semiconductors;
- Threshold Voltage;
- Electronics and Electrical Engineering