Fabrication of GaAlAs 'window-stripe' multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying
Abstract
It is pointed out that multi-quantum-well (MQW) lasers have demonstrated low threshold-current density, less temperature dependence of threshold current, and improved dynamic properties in comparison with conventional double-heterostructure (DH) lasers. By adopting a window-stripe laser structure, it has been possible to increase the ultimate output light power in the conventional DH laser. The present investigation is concerned with the fabrication of a window-stripe GaAs-AlGaAs MQW laser on the basis of the utilization of a Zn-diffusion induced alloying procedure. The new design makes it possible to achieve an increase by three times in the ultimate output power compared to the corresponding power provided by an MQW laser without window.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1984
- DOI:
- 10.1049/el:19840265
- Bibcode:
- 1984ElL....20..383S
- Keywords:
-
- Alloying;
- Aluminum Gallium Arsenides;
- Fabrication;
- Heterojunction Devices;
- Laser Outputs;
- Laser Windows;
- Semiconductor Lasers;
- Energy Gaps (Solid State);
- Gallium Arsenides;
- Potential Fields;
- Surface Diffusion;
- Threshold Currents;
- Zinc;
- Lasers and Masers