0.7 W single-drift GaAs impatt diodes for millimetre-wave frequencies
Abstract
Single-drift flat-profile GaAs impatt diodes with diamond heat sinks have been fabricated in the 50 GHz band. The design of the diodes is based on a lower value of effective saturated drift velocity of electrons at high electric fields. Output power as high as 0.7 W at 53 GHz and an efficiency of 12.3 percent at 51 GHz have been obtained.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1984
- DOI:
- 10.1049/el:19840246
- Bibcode:
- 1984ElL....20..359Z
- Keywords:
-
- Avalanche Diodes;
- Energy Conversion Efficiency;
- Gallium Arsenides;
- Microwave Oscillators;
- Millimeter Waves;
- Carrier Transport (Solid State);
- Drift Rate;
- Electron Energy;
- Fabrication;
- Heat Sinks;
- Electronics and Electrical Engineering